BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK7675-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7675-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 0.075 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 99 W
• Rise Time: 39 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 26 ns
• Part # Aliases: BUK7675-100A,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK7675-100A_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
T
V
R
from drain lead 6 mm from package to
centre of die; T
from upper edge of drain mounting base to
centre of die; T
from source lead to source bond pad;
T
I
see
I
V
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
DS
G(ext)
DS
= 0.25 A; V
= 0.25 A; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 °C; see
= 25 °C
= 25 A; V
= 13 A; dI
Figure 11
Figure 11
Figure 11
Figure 12
Figure 12
Figure 14
= 100 V; V
= 100 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 30 V; T
= 10 V; I
= 10 V; I
= 0 V; V
= 5.6 Ω; T
GS
S
DS
DS
DS
GS
GS
DS
D
D
Rev. 02 — 31 July 2009
/dt = -100 A/µs; V
j
GS
GS
L
and
and
= 25 °C
= 13 A; T
= 13 A; T
= 0 V; T
GS
GS
j
j
= V
= V
= V
Figure 15
= 2.2 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 25 °C
= 25 °C
= 0 V; T
= 0 V; T
j
= 25 °C
= 0 V; T
= 0 V; T
13
13
GS
GS
GS
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
= -55 °C
= 25 °C
j
j
= 25 °C
= 175 °C
= 25 °C
= 10 V;
GS
= -10 V;
N-channel TrenchMOS standard level FET
BUK7675-100A
Min
100
89
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
-
0.05
2
2
-
64
907
127
78
8
39
26
24
4.5
2.5
7.5
0.85
64
120
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
4.4
4
500
10
100
100
187
75
1210
150
110
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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