BT151X-800R/DG,127 NXP Semiconductors, BT151X-800R/DG,127 Datasheet - Page 2

• Manufacturer Part Number: BT151X-800R/DG,127
• Description: SCRs THYRISTOR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-800R/DG,127

• Rohs: yes
• Factory Pack Quantity: 50

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT151X_SER
Product data sheet
Type number
BT151X-500
BT151X-650
BT151X-800
Symbol
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
t
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
, V
RRM
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current half sinewave;
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
BT151X-500
BT151X-650
BT151X-800
Package
Name
-
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 November 2011
Conditions
half sinewave;
T
all conduction angles;
Figure 4
T
surge;
Figure 3
t = 10 ms
I
dI
over any 20 ms period
TM
hs
j
G
t = 10 ms
t = 8.3 ms
= 25 C prior to
/dt 50 mA/s
= 20 A; I
 69 C;
Figure 2
and
G
Figure 1
Figure 5
= 50 mA;
and
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
BT151X series
125
Max
500
650
800
7.5
12
120
132
72
50
2
5
5
0.5
+150
© NXP B.V. 2011. All rights reserved.
Thyristors
Version
SOT186A
Unit
V
V
V
A
A
A
A
A
A/s
A
V
W
W
C
C
2
s
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