BT151X-800R/DG,127 NXP Semiconductors, BT151X-800R/DG,127 Datasheet - Page 6

• Manufacturer Part Number: BT151X-800R/DG,127
• Description: SCRs THYRISTOR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-800R/DG,127

• Rohs: yes
• Factory Pack Quantity: 50

NXP Semiconductors
7. Characteristics
Table 6.
T
BT151X_SER
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
t
GT
L
H
D
gt
q
j
Fig 7.
T
GT
, I
= 25
V
D
GT(25 C)
R
/dt
V
GT

1.6
1.2
0.8
0.4
C unless otherwise stated
50
Normalized gate trigger voltage as a function
of junction temperature
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage
current
critical rate of rise of
off-state voltage
gate controlled
turn-on time
circuit commuted
turn-on time
0
50
Conditions
V
V
V
I
V
V
T
V
T
V
exponential waveform;
I
I
V
I
dI
dV
T
TM
G
TM
j
j
D
D
D
D
D
D
DM
D
100
TM
= 23 A;
= 125 C
= 125 C
gate open circuit
R
= 0.1 A; dI
D
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% V
= 40 A; V
= 20 A; V
GK
/dt = 50 V/s; R
/dt = 30 A/s;
All information provided in this document is subject to legal disclaimers.
= 67% V
001aaa953
T
j
DRM(max)
DRM(max)
= 100 
( C)
Figure 9
Rev. 5 — 1 November 2011
150
T
GT
GT
T
DRM(max)
G
D
R
= 0.1 A;
= 0.1 A;
DRM(max)
/dt = 5 A/s
= 0.1 A;
= 0.1 A;
= V
= 25 V;
; I
; V
T
R
DRM(max)
= 0.1 A;
= V
GK
; T
; T
Figure 8
Figure 7
= 100 
j
RRM(max)
Figure 10
Figure 11
Figure 12
= 125 C;
j
= 125 C;
Fig 8.
;
I
GT(25 C)
I
GT
;
3
2
1
0
50
Normalized gate trigger current as a function
of junction temperature
50
Min
-
-
-
-
-
0.25
-
200
-
-
0
BT151X series
Typ
2
10
7
1.4
0.6
0.4
0.1
130
1000
2
70
50
100
1.75
Max
15
40
20
1.5
-
0.5
-
-
-
-
© NXP B.V. 2011. All rights reserved.
001aaa952
T
j
( C)
150
Thyristors
mA
mA
V/s
Unit
mA
V
V
V
mA
V/s
s
s
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