NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet - Page 3

• Manufacturer Part Number: NDS8435A_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435A_Q

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 7.9 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 95 ns

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
S
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
P
design while R
Typical R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
R
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
T
JA
J
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
1a
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
A
t
o
CA
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.006 in
C/W when mounted on a 0.04 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
2
pad of 2oz copper.
R
(T
DS ON
2
2
pad of 2oz copper.
A
pad of 2oz copper.
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
1c
Min
-0.74
Typ
JC
Max
-2.1
-1.2
is guaranteed by
NDS8435A Rev.C
Units
A
V
1