NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet - Page 4

• Manufacturer Part Number: NDS8435A_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435A_Q

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 7.9 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 95 ns

Typical Electrical Characteristics
-30
-24
-18
-12
-25
-20
-15
-10
-6
-5
0
0
1.6
1.4
1.2
0.8
0.6
-1
0
1
V
-50
V
GS
Figure 1. On-Region Characteristics
DS
Figure 5. Transfer Charateristics
=-10V
Figure 3. On-Resistance Variation
-6.0
= -10V
V
I
D
-0.5
-25
-1.5
GS
= -7.9A
= -10V
V
V
GS
DS
-4.5
0
T , JUNCTION TEMPERATURE (°C)
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
-1
-2
-4.0
-3.5
2 5
-1.5
-2.5
5 0
-3.0
T
J
7 5
-2
-3
= -55°C
-2.5
1 0 0
-2.5
-3.5
.
125°C
.
1 2 5
25°C
-3
-4
1 5 0
2.5
1.5
0.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2
1
2
1
0
1
-50
0
0
with Drain Current and Gate Voltage
with Drain Current and Temperature
Figure 6. Gate Threshold Variation
V
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
GS
-25
=-3.5V
= -10V
-5
-5
0
with Temperature
T , JUNCTION TEMPERATURE (°C)
J
I
I
-4.0
D
D
, DRAIN CURRENT (A)
25
, DRAIN CURRENT (A)
-10
-10
T = 125°C
J
-4.5
-55°C
50
25°C
-5.0
-15
-15
75
-6.0
.
I
D
1 0 0
V
-7.0
DS
=-250µA
-20
-20
= V
GS
-10
1 2 5
.
.
NDS8435A Rev.C
-25
-25
1 5 0
1