NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet - Page 5

• Manufacturer Part Number: NDS8435A_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435A_Q

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 7.9 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 95 ns

Typical Electrical Characteristics
V
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
GS
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
5 0 0
3 0 0
1 5 0
1.125
1.075
1.025
0.975
0.925
1.05
0.95
1.1
0 .1
Figure 7. Breakdown Voltage
1
-50
Variation with Temperature.
f = 1 MHz
V
I
D
R
GS
0 .2
= -250µA
-25
GEN
= 0 V
-V
DS
T
0
0 .5
J
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
-V
2
D
S
DD
7 5
R
.
5
L
1 0 0
D U T
.
(continued)
1 0
1 2 5
C rss
C iss
C oss
V
2 0
O U T
1 5 0
3 0
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation
1 0 %
0.0001
0.001
1 0
0.01
8
6
4
2
0
0.1
Figure 10. Gate Charge Characteristics.
20
0
Figure 12. Switching Waveforms
5
1
I
0
D
= -7.9A
V
t
GS
5 0 %
o n
1 0 %
= 0V
0.2
-V
1 0
SD
t
, BODY DIODE FORWARD VOLTAGE (V)
9 0 %
PULSE WIDTH
r
0.4
Q
g
with Source Current and
T = 125°C
2 0
, GATE CHARGE (nC)
J
t
0.6
d(off)
Temperature
25°C
-55°C
5 0 %
3 0
0.8
V
9 0 %
DS
.
t
= -5V
1 0 %
off
9 0 %
.
1
4 0
-15
NDS8435A Rev.C
INVERTED
t
f
1.2
-10
5 0
1