BSP225 T/R NXP Semiconductors, BSP225 T/R Datasheet - Page 5

• Manufacturer Part Number: BSP225 T/R
• Description: MOSFET P-CH DMOS 250V 225MA
• Manufacturer: NXP Semiconductors

Specifications of BSP225 T/R

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 108 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1500 mW
• Rise Time: 108 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 185 ns
• Part # Aliases: BSP225,115

Philips Semiconductors
April 1995
handbook, halfpage
handbook,
P-channel enhancement mode vertical
D-MOS transistor
P tot
(W)
1.6
1.2
0.8
0.4
2
0
0
10 V
0 V
Fig.2 Switching time test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MBB693
200
5
handbook, halfpage
handbook, halfpage
Fig.5 Typical output characteristics; T
INPUT
OUTPUT
(A)
I D
0.8
0.6
0.4
0.2
1
0
0
Fig.3 Input and output waveforms.
10 %
5
t on
90 %
10
V GS = 10 V
90 %
15
6 V
5 V
4 V
3 V
Product specification
t off
20
V DS (V)
BSP225
j
MDA706
MBB690
= 25 C.
10 %
25