BSP225 T/R NXP Semiconductors, BSP225 T/R Datasheet - Page 7

• Manufacturer Part Number: BSP225 T/R
• Description: MOSFET P-CH DMOS 250V 225MA
• Manufacturer: NXP Semiconductors

Specifications of BSP225 T/R

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 108 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1500 mW
• Rise Time: 108 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 185 ns
• Part # Aliases: BSP225,115

Philips Semiconductors
April 1995
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
Fig.10 Temperature coefficient of gate-source
1.1
0.9
0.8
0.7
k
1
50
threshold voltage;
typical V
k
=
----------------------------------------------- - ;
–
V
–
GS th
0
V
GS(th)
GS th
at 1 mA.
at 25 C
at T
50
j
100
T j ( C)
MDA711
150
7
Product specification
BSP225