SUD50N03-10BP Vishay/Siliconix, SUD50N03-10BP Datasheet
SUD50N03-10BP
Specifications of SUD50N03-10BP
Related parts for SUD50N03-10BP
SUD50N03-10BP Summary of contents
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... stg Symbol Typical R thJA R thJC Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD50N03-10 Siliconix ) Limit Unit 100 –55 to 175 C Maximum Unit 30 C/W C/W 1.8 www ...
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... SUD50N03-10 Siliconix Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State Resistance r DS(on) b Forward Transconductance a Dynamic Input Capacitance ...
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... 125 iss Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD50N03-10 Siliconix Transfer Characteristics T = – 125 C – Gate-to-Source Voltage ( – Drain Current (A) D Gate Charge Q – ...
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... SUD50N03-10 Siliconix Typical Characteristics (25 C Unless Otherwise Noted) On-Resistance vs. Junction Temperature – Junction Temperature ( C) J Thermal Ratings Maximum Drain Current vs. Ambient Temperature T – Ambient Temperature ( C) A Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 – ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...