SUD50N03-10BP Vishay/Siliconix, SUD50N03-10BP Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-10BP
• Description: MOSFET 30V 20A 71W
• Manufacturer: Vishay/Siliconix

Specifications of SUD50N03-10BP

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Resistance Drain-source Rds (on): 10 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 83 W
• Rise Time: 8 ns
• Factory Pack Quantity: 2000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns

Typical Characteristics (25 C Unless Otherwise Noted)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
C
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V
V
6 V
DS
DS
V
Output Characteristics
GS
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
D
Transconductance
= 10, 9, 8, 7 V
– Drain Current (A)
Capacitance
S-57253—Rev. E, 24-Feb-98
5 V
C
oss
2, 3 V
T
C
4 V
= –55 C
C
125 C
iss
25 C
Siliconix was formerly a division of TEMIC Semiconductors
Phone [phone]
V
I
FaxBack [phone]
D
DS
= 50 A
V
On-Resistance vs. Drain Current
= 15 V
GS
V
GS
= 4.5 V
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
I
T
D
– Total Gate Charge (nC)
C
– Drain Current (A)
= –55 C
Gate Charge
SUD50N03-10
V
www.siliconix.com
GS
= 10 V
125 C
Siliconix
25 C
3