SUD50N03-10BP Vishay/Siliconix, SUD50N03-10BP Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-10BP
• Description: MOSFET 30V 20A 71W
• Manufacturer: Vishay/Siliconix

Specifications of SUD50N03-10BP

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Resistance Drain-source Rds (on): 10 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 83 W
• Rise Time: 8 ns
• Factory Pack Quantity: 2000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns

SUD50N03-10
Siliconix
Typical Characteristics (25 C Unless Otherwise Noted)
Thermal Ratings
4
0.01
0.1
2
1
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
10
On-Resistance vs. Junction Temperature
–4
Duty Cycle = 0.5
V
I
0.02
0.05
D
GS
0.2
0.1
= 50 A
= 10 V
Maximum Drain Current vs.
T
T
J
A
Ambient Temperature
– Junction Temperature ( C)
– Ambient Temperature ( C)
S-57253—Rev. E, 24-Feb-98
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
10
–2
Square Wave Pulse Duration (sec)
Siliconix was formerly a division of TEMIC Semiconductors
Phone [phone]
500
100
100
0.1
10
10
10
1
1
–1
0.1
by r
Limited
0
DS(on)
Source-Drain Diode Forward Voltage
FaxBack [phone]
V
V
0.3
SD
T
DS
J
= 175 C
Single Pulse
– Source-to-Drain Voltage (V)
– Drain-to-Source Voltage (V)
Safe Operating Area
T
A
1
= 25 C
0.6
1
0.9
www.siliconix.com
T
10
J
= 25 C
1.2
10, 100 s
1 ms
10 ms
100 ms
1 s
dc
10
100
1.5
30