IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP460PPBF
• Description: MOSFET N-Chan 500V 20 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP460PPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.27 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 58 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 280 W
• Rise Time: 59 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 110 ns

IRFP460, SiHFP460
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
R
J
DS
GS
GS
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
J
= 4.3 Ω, R
= 400 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
0.24
TEST CONDITIONS
DS
DS
GS
DS
-
-
= 250 V, I
= 500 V, V
= V
= 0 V, I
= 50 V, I
F
V
V
V
GS
= 20A, dI/dt = 100 A/µs
DS
S
GS
GS
D
GS
= 20 A, V
= ± 20 V
I
= 13 Ω, see fig. 10
= 25 V,
, I
D
= 0 V,
= 0 V, T
D
= 20 A, V
D
see fig. 6 and 13
D
= 250 µA
D
= 250 µA
GS
= 12 A
= 20 A ,
I
D
D
= 0 V
= 12 A
GS
= 1 mA
J
G
G
= 125 °C
DS
b
= 0 V
= 400 V
b
MAX.
D
S
b
0.45
D
S
b
40
b
-
b
MIN.
500
2.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
TYP.
4200
0.63
870
350
110
570
5.0
5.7
18
59
58
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.27
S
250
210
110
860
4.0
1.8
8.6
25
29
20
80
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V