IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP460PPBF
• Description: MOSFET N-Chan 500V 20 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP460PPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.27 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 58 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 280 W
• Rise Time: 59 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 110 ns

IRFP460, SiHFP460
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
GD
G
I
G
D.U.T.
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91237_12c
I
D
1200
2000
1600
2400
800
400
+
-
V
0
DS
25
V
DD
= 50 V
Starting T
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
8.9 A
13 A
20 A
I
D
150
Document Number: 91237
S-81360-Rev. A, 28-Jul-08