IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP460PPBF
• Description: MOSFET N-Chan 500V 20 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP460PPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.27 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 58 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 280 W
• Rise Time: 59 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 110 ns

Document Number: 91237
S-81360-Rev. A, 28-Jul-08
Vary t
required I
91237_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
to obtain
12
16
20
91237_11
AS
8
4
0
Fig. 12a - Unclamped Inductive Test Circuit
25
R
10 V
G
10
10
0.1
-2
-3
V
1
DS
10
50
T
0.01
0.2
0.1
0.05
0.02
0 - 0.5
-5
C
t
, Case Temperature (°C)
p
75
Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
10
100
-4
Single Pulse
(Thermal Response)
125
+
-
10
t
150
V
1
-3
, Rectangular Pulse Duration (S)
DD
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
0.1
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
Notes:
1. Duty Factor, D = t
2. Peak T
d(on)
V
IRFP460, SiHFP460
DS
t
r
j
1
t
= P
P
p
DM
DM
D.U.T.
x Z
t
1
Vishay Siliconix
1
R
thJC
/t
D
2
t
d(off)
V
t
2
+ T
DS
C
10
t
f
V
+
-
www.vishay.com
DD
V
DD
5