SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 10

• Manufacturer Part Number: SI6467BDQ-T1
• Description: MOSFET 12V 8.0A 1.05W
• Manufacturer: Vishay/Siliconix

Specifications of SI6467BDQ-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.8 A
• Resistance Drain-source Rds (on): 12.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 85 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.05 W
• Rise Time: 85 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 220 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSSOP-8
0.092
(2.337)
0.026
(0.660)
0.014
0.012
(0.356)
(0.305)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72611
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Revision: 21-Jan-08
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