SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 2
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SI6467BDQ-T1
Manufacturer Part Number
SI6467BDQ-T1
Description
MOSFET 12V 8.0A 1.05W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI6467BDQ-T1.pdf
(11 pages)
Specifications of SI6467BDQ-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.8 A
Resistance Drain-source Rds (on)
12.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Fall Time
85 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.05 W
Rise Time
85 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
220 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 830
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6467BDQ-T1-GE3
Manufacturer:
TI
Quantity:
126
Si6467BDQ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
24
18
12
6
0
0
V
a
a
GS
1
V
DS
= 5 thru 2 V
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
Symbol
R
3
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
1.5 V
rr
fs
gs
gd
r
f
g
4
V
1 V
V
I
DS
D
DS
≅ - 1 A, V
= - 6 V, V
I
F
= - 12 V, V
V
V
V
V
V
5
V
V
= - 1.5 A, di/dt = 100 A/µs
V
DS
GS
GS
DS
GS
I
V
S
DS
DS
DS
DD
= - 1.5 A, V
Test Conditions
= - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 12 V, V
= - 5 V, I
= 0 V, V
= - 6 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
GS
D
= - 450 µA
D
D
D
GS
= - 8.0 A
GS
L
= - 8.0 A
= - 7.0 A
= - 5.8 A
= ± 8 V
= - 4.5 V
= 6 Ω
= 0 V
= 0 V
J
D
= 70 °C
= - 8.0 A
g
30
24
18
12
= 6 Ω
6
0
0.0
V
- 0.45
Min.
0.5
- 20
GS
Transfer Characteristics
25 °C
T
- Gate-to-Source Voltage (V)
C
= 125 °C
0.0125
0.010
0.016
- 0.56
Typ.
15.5
220
155
140
44
46
45
85
5
1.0
S-80682-Rev. D, 31-Mar-08
Document Number: 72087
- 55 °C
0.0125
0.0155
- 0.85
± 100
0.020
Max.
- 1.1
- 25
130
400
235
210
- 1
70
70
1.5
Unit
µA
nC
nA
ns
V
A
Ω
S
V
2.0