SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 5

• Manufacturer Part Number: SI6467BDQ-T1
• Description: MOSFET 12V 8.0A 1.05W
• Manufacturer: Vishay/Siliconix

Specifications of SI6467BDQ-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.8 A
• Resistance Drain-source Rds (on): 12.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 85 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.05 W
• Rise Time: 85 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 220 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72087.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave
10
-2
Pulse Duration (s)
10
-1
1
Vishay Siliconix
Si6467BDQ
www.vishay.com
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