IS61LV256AL-10JLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV256AL-10JLI-TR Datasheet - Page 9

• Manufacturer Part Number: IS61LV256AL-10JLI-TR
• Description: IC SRAM 256KBIT 10NS 28SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV256AL-10JLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Density: 256Kb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: SOJ
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 25mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV256AL
DATA RETENTION WAVEFORM (CE Controlled)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
07/29/09
DATA RETENTION SWITCHING CHARACTERISTICS
Note:
Symbol Parameter
1. Typical Values are measured at V
V
I
t
t
dr
sdr
rdr
dr
GND
V
Data Retention Current
Data Retention Setup Time See Data Retention Waveform
Recovery Time
dd
VDD
V
CE
DR
for Data Retention
dd
= 3.3V, T
t
SDR
Test Condition
See Data Retention Waveform
V
V
See Data Retention Waveform
In
dd
a
≥ V
= 25
= 2.0V, CE ≥ V
dd
o
C and not 100% tested.
– 0.2V, or V
dd
In
Data Retention Mode
CE ≥ VDD - 0.2V
≤ V
– 0.2V
ss
+ 0.2V
Com.
Ind.
t
RDR
Min.
2.0
t
—
—
rc
0
Typ.
—
2
(1)
Max.
3.6
40
50
—
—
Unit
µA
ns
ns
V
9