SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3588DV-T1
• Description: MOSFET 20V 3.0/2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3588DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A, 0.57 A
• Resistance Drain-source Rds (on): 0.08 Ohms, 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 29 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 29 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 28 ns at N Channel, 24 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 3.0 A
On-Resistance vs. Drain Current
= 10 V
1
1
2
V
V
DS
GS
Output Characteristics
V
Q
- Drain-to-Source Voltage (V)
= 4.5 V thru 2 V
GS
g
I
D
- Total Gate Charge (nC)
Gate Charge
= 1.8 V
- Drain Current (A)
2
2
4
3
3
6
1.5 V
V
V
GS
GS
4
4
= 4.5 V
8
= 2.5 V
10
5
5
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 3.0 A
0.5
4
= 4.5 V
V
V
DS
C
0
Transfer Characteristics
T
GS
oss
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
1.0
8
T
50
Vishay Siliconix
C
C
25 °C
iss
= - 55 °C
1.5
12
75
Si3588DV
www.vishay.com
100
2.0
16
125 °C
125
150
2.5
20
3