SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 2
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SI3588DV-T1
Manufacturer Part Number
SI3588DV-T1
Description
MOSFET 20V 3.0/2.2A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3588DV-T1.pdf
(12 pages)
Specifications of SI3588DV-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A, 0.57 A
Resistance Drain-source Rds (on)
0.08 Ohms, 0.145 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
30 ns at N Channel, 29 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
30 ns at N Channel, 29 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
28 ns at N Channel, 24 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3588DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
DS
I
D
V
V
D
DS
DS
DS
≅ - 1 A, V
I
≅ 0.5 A, V
= - 10 V, V
F
I
F
= - 16 V, V
V
V
V
V
V
= - 1.05 A, dI/dt = 100 A/µs
= 16 V, V
V
V
I
= 10 V, V
V
= 1.05 A, dI/dt = 100 A/µs
V
V
V
V
V
DS
GS
GS
GS
S
V
DS
V
I
V
S
DS
DS
V
DS
DS
DS
DS
GS
GS
DD
DS
V
= - 1.05 A, V
DD
GS
= 1.05 A, V
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
DS
= V
= - 16 V, V
= - 5 V, I
= 0 V, V
= 0 V, V
≥ 5 V, V
= 2.5 V, I
= 1.8 V, I
= 16 V, V
= 10 V, R
= - 4 V, R
= 4.5 V, I
N-Channel
N-Channel
GEN
P-Channel
P-Channel
= 5 V, I
GEN
GS
GS
Test Conditions
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
= 4.5 V, R
= 4.5 V, I
D
= 0 V, T
GS
GS
GS
GS
D
= - 250 µA
D
D
D
D
D
D
= 250 µA
GS
GS
L
D
= - 2.2 A
GS
GS
L
= - 2.2 A
= 2.6 A
= - 1.8 A
= 2.3 A
= - 1.0 A
= 3 A
= 4.5 V
= - 4.5 V
= ± 8 V
= ± 8 V
= 10 Ω
= 3 A
= 8 Ω
= 0 V
= 0 V
= 0 V
= 0 V
J
J
D
= 85 °C
D
= 85 °C
g
= - 2.2 A
g
= 3 A
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.45
Min.
0.45
- 5
5
S09-2275-Rev. B, 02-Nov-09
0.064
0.115
0.080
0.163
0.104
0.240
Document Number: 71332
Typ.
- 0.8
0.65
0.8
1.0
0.9
0.9
12
12
30
29
28
24
12
30
20
20
9
5
5
5
± 100
± 100
0.080
0.145
0.100
0.200
0.128
0.300
Max.
- 1.1
- 10
1.1
7.5
7.5
- 1
10
20
20
50
50
50
45
20
50
40
40
1
Unit
nA
µA
nC
ns
Ω
V
A
S
V