IS62WV12816BLL-55T ISSI, Integrated Silicon Solution Inc, IS62WV12816BLL-55T Datasheet - Page 3

• Manufacturer Part Number: IS62WV12816BLL-55T
• Description: IC SRAM 2MBIT 55NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS62WV12816BLL-55T

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS62WV12816ALL,
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
OPERATING RANGE (V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
01/13/2010
Mode
Not Selected
Output Disabled
Read
Write
Symbol
V
T
P
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Range
Commercial
Industrial
TERM
STG
T
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
–40°C to +85°C
WE
WE
WE
WE
WE
0°C to +70°C
X
X
X
H
H
H
H
H
L
L
L
DD
IS62WV12816BLL
CS1
CS1
CS1
CS1
CS1
)
H
X
X
L
L
L
L
L
L
L
L
CS2
X
X
H
H
H
H
H
H
H
H
L
(1)
OE
OE
OE
OE
OE
X
X
X
H
H
X
X
X
L
L
L
IS62WV12816ALL
LB
LB
LB
LB
LB
X
X
H
X
H
H
L
L
L
L
L
1-800-379-4774
1.65V - 2.2V
1.65V - 2.2V
UB
UB
UB
UB
UB
X
X
H
X
H
H
L
L
L
L
L
–0.2 to V
–65 to +150
Value
I/O0-I/O7
1.0
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
DD
OUT
OUT
IN
IN
+0.3
IS62WV12816BLL
I/O PIN
2.5V - 3.6V
2.5V - 3.6V
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
Unit
°C
W
V
V
DD
I
I
I
SB
SB
SB
Current
1
1
1
I
I
I
I
CC
CC
CC
CC
, I
, I
, I
SB
SB
SB
2
2
2
3