IS62WV12816BLL-55T ISSI, Integrated Silicon Solution Inc, IS62WV12816BLL-55T Datasheet - Page 7

• Manufacturer Part Number: IS62WV12816BLL-55T
• Description: IC SRAM 2MBIT 55NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS62WV12816BLL-55T

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS62WV12816ALL,
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
01/13/2010
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
HZB
RC
AA
OHA
ACS1/
DOE
HZOE
LZOE
HZCS1/
LZCS1/
BA
LZB
(2)
(2)
t
ACS2
t
t
LZCS2
HZCS2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1/CS2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
IS62WV12816BLL
Min.
45
10
—
—
—
—
10
—
5
0
0
0
45 ns
1-800-379-4774
Max.
45
45
20
15
15
45
15
—
—
—
—
—
(1)
(Over Operating Range)
Min.
55
10
10
—
—
—
—
—
5
0
0
0
55 ns
Max.
55
—
—
55
25
20
—
20
—
55
20
—
Min.
70
10
—
—
—
—
10
—
5
0
0
0
70 ns
Max.
—
70
—
70
35
25
25
70
25
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7