IS62WV12816BLL-55T ISSI, Integrated Silicon Solution Inc, IS62WV12816BLL-55T Datasheet - Page 4

• Manufacturer Part Number: IS62WV12816BLL-55T
• Description: IC SRAM 2MBIT 55NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS62WV12816BLL-55T

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS62WV12816ALL,
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Symbol
V
V
V
V
I
I
Symbol
C
C
LI
LO
OH
IL
OL
IH
IL (1)
IN
OUT
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Input Capacitance
Input/Output Capacitance
(1)
IS62WV12816BLL
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
Integrated Silicon Solution, Inc. — www.issi.com —
(Over Operating Range)
OUT
IN
Conditions
V
V
≤ V
OUT
IN
≤ V
DD
= 0V
= 0V
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
V
DD
Max.
10
8
Min.
–0.2
–0.2
1.4
2.2
1.4
2.2
–1
–1
—
—
Unit
pF
pF
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
—
—
1
1
+ 0.2
+ 0.3
1-800-379-4774
01/13/2010
Unit
µA
µA
Rev. H
V
V
V
V
V
V
V
V