TF252TH-4-TL-H ON Semiconductor, TF252TH-4-TL-H Datasheet
TF252TH-4-TL-H
Specifications of TF252TH-4-TL-H
Related parts for TF252TH-4-TL-H
TF252TH-4-TL-H Summary of contents
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... Halogen free compliance • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Package Dimensions unit : mm (typ) 7031A-001 TF252TH-4-TL-H 1.4 TF252TH-5-TL-H 0. 0.2 0. Drain Source 3 : Gate ...
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... I DSS 140 to 240 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 5pF OSC Ordering Information Device TF252TH-4-TL-H TF252TH-5-TL-H TF252TH Symbol Conditions V (BR)GDO I G =--100μ (off =2V =1μA I DSS V DS =2V =0V | yfs | V DS =2V =0V, f=1kHz ...
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... Zero-Gate Voltage Drain Current, I DSS -- μA Ciss -- 1 1.0 10 Drain-to-Source Voltage TF252TH 350 300 250 200 150 100 50 --0.30V 0 1.5 2.0 0 IT12440 400 V DS =2V 350 300 250 200 150 100 ...
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... Input Voltage 120 100 100 Ambient Temperature ° C TF252TH --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 350 400 100 Zero-Gate Voltage Drain Current, I DSS -- μA IT12448 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 150 200 100 Zero-Gate Voltage Drain Current, I DSS -- μA ...
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... Taping Specifi cation TF252TH-4-TL-H, TF252TH-5-TL-H TF252TH No. A0842-5/7 ...
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... Outline Drawing TF252TH-4-TL-H, TF252TH-5-TL-H TF252TH Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 0.5 0.45 0.45 0.45 0.45 No. A0842-6/7 ...
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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. TF252TH PS No. A0842-7/7 ...