TF252TH-4-TL-H ON Semiconductor, TF252TH-4-TL-H Datasheet - Page 4

• Manufacturer Part Number: TF252TH-4-TL-H
• Description: JFET JunctionFET 20V 1mA Nch VTFP
• Manufacturer: ON Semiconductor

Specifications of TF252TH-4-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain Current (idss At Vgs=0): 140 uA to 350 uA
• Drain Source Voltage Vds: 2 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 1 mA
• Mounting Style: SMD/SMT
• Package / Case: VTFP-3
• Gate-source Cutoff Voltage: - 0.4 V
• Maximum Operating Temperature: + 150 C
• Power Dissipation: 100 mW

--0.2
--0.4
1.0
0.1
120
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
0
100
2
7
5
3
2
7
5
3
2
0
0
G V : V CC =2V
I DSS : V DS =2V
THD : V CC =2V
I DSS : V DS =2V
Zero-Gate Voltage Drain Current, I DSS -- μA
V IN =10mV
f=1kHz
R L =2.2kΩ
Cin=5pF
20
150
f=1kHz
R L =2.2kΩ
Cin=5pF
Ambient Temperature, Ta -- ° C
50
40
Input Voltage, V IN -- mV
200
G V -- I DSS
THD -- V IN
60
P D -- Ta
250
100
80
100
300
120
150
350
140
IT12448
IT12450
400
200
160
IT12453
TF252TH
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100
100
Zero-Gate Voltage Drain Current, I DSS -- μA
Zero-Gate Voltage Drain Current, I DSS -- μA
150
150
200
200
ΔG VV -- I DSS
THD -- I DSS
250
250
ΔG VV : V CC =2V→1.5V
I DSS : V DS =2V
300
300
THD : V CC =2V
I DSS : V DS =2V
V IN =10mV
f=1kHz
R L =2.2kΩ
Cin=5pF
V IN =30mV
f=1kHz
R L =2.2kΩ
Cin=5pF
350
350
No. A0842-4/7
IT12451
IT12449
400
400