TF252TH-4-TL-H ON Semiconductor, TF252TH-4-TL-H Datasheet - Page 2

• Manufacturer Part Number: TF252TH-4-TL-H
• Description: JFET JunctionFET 20V 1mA Nch VTFP
• Manufacturer: ON Semiconductor

Specifications of TF252TH-4-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain Current (idss At Vgs=0): 140 uA to 350 uA
• Drain Source Voltage Vds: 2 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 1 mA
• Mounting Style: SMD/SMT
• Package / Case: VTFP-3
• Gate-source Cutoff Voltage: - 0.4 V
• Maximum Operating Temperature: + 150 C
• Power Dissipation: 100 mW

Electrical Characteristics at Ta=25°C
* : The TF252TH is classifi ed by I DSS as follows : (unit : μ A)
Test Circuit
Ordering Information
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, V CC =2.0V, R L =2.2kΩ, Cin=5pF, See specifi ed Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
TF252TH-4-TL-H
TF252TH-5-TL-H
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
I DSS
Rank
Device
Parameter
140 to 240
5pF
OSC
4
210 to 350
5
V (BR)GDO
V GS (off)
I DSS
| yfs |
Ciss
Crss
G V
ΔG VV
ΔGvf
THD
V NO
VTVM
Symbol
2.2kΩ
33μF
+
Package
VTFP
VTFP
V
THD
I G =--100μA
V DS =2V, I D =1μA
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2.0V → 1.5V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
TF252TH
V CC =2V
V CC =1.5V
Conditions
8,000pcs./reel
8,000pcs./reel
Shipping
min
140*
--0.1
--20
Pb Free and Halogen Free
0.8
Ratings
typ
memo
--106
--0.4
0.95
--0.6
0.65
1.4
3.1
1.0
max
--102
350*
--1.0
--2.0
--1.0
No. A0842-2/7
Unit
mS
μA
pF
pF
dB
dB
dB
dB
%
V
V