PBSS4260PAN,115 NXP Semiconductors, PBSS4260PAN,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS4260PAN,115
• Description: Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4260PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 70 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 140 MHz
• Dc Collector/base Gain Hfe Min: 290
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 430
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4260PAN
Product data sheet
Fig. 10. DC current gain as a function of collector
Fig. 12. Base-emitter voltage as a function of collector
V
h
(V)
FE
BE
800
600
400
200
1.2
0.8
0.4
0.0
0
10
10
V
(1) T
(2) T
(3) T
current; typical values
V
(1) T
(2) T
(3) T
current; typical values
-1
CE
-1
CE
= 2 V
= 2 V
amb
amb
amb
amb
amb
amb
1
= 100 °C
= 25 °C
= −55 °C
1
= −55 °C
= 25 °C
= 100 °C
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
10
10
All information provided in this document is subject to legal disclaimers.
aaa-000083
aaa-000114
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
12 December 2012
Fig. 11. Collector current as a function of collector-
Fig. 13. Base-emitter saturation voltage as a function of
V
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
BEsat
(A)
(V)
I
C
1.2
1.0
0.8
0.6
0.4
0.2
3
2
1
0
10
T
emitter voltage; typical values
I
(1) T
(2) T
(3) T
collector current; typical values
0
C
amb
-1
/I
B
I
B
amb
amb
amb
= 20
= 50 mA
= 25 °C
= 100 °C
1
1
= −55 °C
= 25 °C
10
2
(1)
(2)
(3)
10
PBSS4260PAN
3
2
45
35
25
15
5
© NXP B.V. 2012. All rights reserved
10
4
aaa-000113
aaa-000115
3
40
30
20
10
V
I
C
CE
(mA)
(V)
10
5
4
11 / 17