PBSS4260PAN,115 NXP Semiconductors, PBSS4260PAN,115 Datasheet - Page 17

• Manufacturer Part Number: PBSS4260PAN,115
• Description: Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4260PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 70 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 140 MHz
• Dc Collector/base Gain Hfe Min: 290
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 430
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
16. Contents
1
2
3
4
5
6
7
8
9
10
11
11.1
12
13
14
15
15.1
15.2
15.3
15.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Date of release: 12 December 2012
PBSS4260PAN
Product data sheet
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ............................................... 2
Ordering information ............................................. 2
Marking ................................................................... 2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics ....................................................... 9
Test information ................................................... 13
Package outline ................................................... 14
Soldering .............................................................. 14
Revision history ................................................... 14
Legal information .................................................15
Quality information .........................................
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
All information provided in this document is subject to legal disclaimers.
12 December 2012
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
PBSS4260PAN
© NXP B.V. 2012. All rights reserved
17 / 17