PBSS4230PAN,115 NXP Semiconductors, PBSS4230PAN,115 Datasheet - Page 13

• Manufacturer Part Number: PBSS4230PAN,115
• Description: Transistors Bipolar - BJT 30V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 60 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 120 MHz
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 380
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
11. Test information
PBSS4230PAN
Product data sheet
Fig. 18. BISS transistor switching time definition
Fig. 19. Test circuit for switching times
11.1 Quality information
90 %
10 %
90 %
10 %
I
I
B
C
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
oscilloscope
t
d
t
on
V
t
I
r
All information provided in this document is subject to legal disclaimers.
(probe)
450 Ω
R1
R2
14 December 2012
R
B
V
BB
R
C
V
CC
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
t
off
oscilloscope
input pulse
(idealized waveform)
output pulse
(idealized waveform)
t
f
PBSS4230PAN
I
006aaa003
C
(100 %)
© NXP B.V. 2012. All rights reserved
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