PBSS4230PAN,115 NXP Semiconductors, PBSS4230PAN,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS4230PAN,115
• Description: Transistors Bipolar - BJT 30V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 60 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 120 MHz
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 380
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4230PAN
Product data sheet
Fig. 5.
Fig. 6.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
4-layer PCB 35 µm, mounting pad for collector 1 cm
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB 70 µm, standard footprint
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
- 5
-5
duty cycle = 1
0.75
0.33
0.1
0.02
duty cycle = 1
0
0.75
0.33
0.1
0.02
0
0.05
0.05
0.01
0.5
0.2
0.5
0.2
10
10
- 4
-4
0.01
10
10
- 3
-3
All information provided in this document is subject to legal disclaimers.
10
10
- 2
-2
14 December 2012
10
10
2
- 1
-1
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
1
1
10
10
PBSS4230PAN
10
10
2
2
© NXP B.V. 2012. All rights reserved
t
t
p
p
006aad169
006aac610
(s)
(s)
10
10
3
3
7 / 17