KIT33800EKEVME Freescale Semiconductor, KIT33800EKEVME Datasheet - Page 10

• Manufacturer Part Number: KIT33800EKEVME
• Description: Power Management IC Development Tools ENGINE CONTROL INTEGRATE
• Manufacturer: Freescale Semiconductor
• Type: PMIC Solutionsr

Specifications of KIT33800EKEVME

• Rohs: yes
• Product: Evaluation Kits
• Tool Is For Evaluation Of: MC33800
• Input Voltage: 5 V
• Output Voltage: 9 V
• Output Current: 0 mA to 1075 mA

Table 3. Static Electrical Characteristics
otherwise noted. Typical values noted reflect the approximate parameter means at T
otherwise noted.
10
33800
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SPI DIGITAL INTERFACE (SO, SI, CS, SCLK) (CONTINUED)
PREDRIVER OUTPUT FUNCTION (GD1 - GD6)
Notes
Sleep Mode EN and DEFAULT Input Current
Normal Mode Input Logic Pull-down Current
Normal Mode DEFAULT Pull-up Current
SCLK, Tri-state SO Output
CS
CS
CS
SO High-state Output Voltage
SO Low-state Output Voltage
EN Input Pull-down Current
Gate Drive Output Voltage
Gate Drive Sink and Source Current
Sleep Mode Gate to Source Resistor
Short Fault Detection Voltage Threshold
Open Fault Detection Voltage Threshold
Characteristics noted under conditions 3.0V ≤ V
9.
V
0.8V to 5.0V
0.0V to 5.0V
CS
CS
CS
I
I
EN = V
I
I
V
Programmable from 0.5V to 3.0V in 0.5V increments.
V
Input Current
Pull-up Current
Leakage Current to V
SOHIGH
SOLOW
GATEDRIVE
GATEDRIVE
D D
DD
DD
Parameter applies to P1, P3, P5, P7, PWM1 to PWM6, SI and VCAL, and are guaranteed by design.
= V
= 0.0V
= 5.0V, V
= High, Outputs Programmed ON
= High, Outputs Programmed OFF
= 0.0V, V
DD
DD
= 1.0mA
= -1.0mA
= 100µA
= - 100µA
DD
EN
= 0.0V
= 5.0V, V
DD
Characteristic
D E FA U LT
= 5.0V
(9)
DD
≤ 5.5V, 9.0V ≤ V
R
I
GS (PULLDOWN)
I
SCLK,
I
V
V
DEFAULTPU
GATEDRIVE
V
I
I
V
V
Symbol
I
V
DS(FLTTH)
DS(FLTTH)
LOG
LO
PWR
CS(LKG)
I
SOHIGH
I
ENPD
GS (OFF)
SOLOW
GS (ON)
C
I
GICPD
CS
SPU
I
ICSS
TRISO
≤ 18V, - 40°C ≤ T
V
A
DD
-20%
Min
-5.0
-5.0
-10
-10
-10
= 25°C under nominal conditions, unless
5.0
5.0
2.0
10
65
–
–
–
–
- 0.4
Analog Integrated Circuit Device Data
A
≤ 125°C, GND = 0V, unless
Typ
200
7.0
0.2
2.0
2.5
15
50
–
–
–
–
–
–
–
–
Freescale Semiconductor
+20%
Max
100
300
-25
-30
0.4
9.0
0.5
5.0
3.0
10
25
10
10
10
–
Unit
mA
KΩ
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V