BTA206X-800ET,127 NXP Semiconductors, BTA206X-800ET,127 Datasheet - Page 2

• Manufacturer Part Number: BTA206X-800ET,127
• Description: Triacs 3 QUADRANT TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA206X-800ET,127

• Rohs: yes
• On-state Rms Current (it Rms): 6 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.4 mA
• Holding Current (ih Max): 15 mA
• Gate Trigger Voltage (vgt): 0.8 V
• Gate Trigger Current (igt): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-220F-3

NXP Semiconductors
Table 1.
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BTA206X-800ET
Product data sheet
Symbol
Static characteristics
I
Dynamic characteristics
dV
dI
Pin
1
2
3
mb
Type number
BTA206X-800ET
GT
com
D
/dt
/dt
Symbol Description
T1
T2
G
n.c.
Quick reference data
Pinning information
Ordering information
Parameter
gate trigger current
rate of rise of off-state
voltage
rate of change of
commutating current
main terminal 1
main terminal 2
gate
mounting base; isolated
Package
Name
TO-220F
…continued
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
V
circuit
V
dV
D
D
D
DM
DRM
D
com
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; T
Figure 7
Figure 7
Figure 7
Rev. 2 — 20 December 2011
= 536 V; T
); exponential waveform; gate open
/dt = 1 V/µs; gate open circuit
Simplified outline
T
T
T
SOT186A (TO-220F)
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
= 150 °C; I
j
= 150 °C; (V
1
mb
2
3
T(RMS)
DM
j
j
= 67% of
= 25 °C;
= 6 A;
j
= 25 °C;
= 25 °C;
Graphic symbol
BTA206X-800ET
Min
-
-
-
50
5
T2
sym051
Typ
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
T1
G
Max
10
10
10
-
-
Version
SOT186A
Unit
mA
mA
mA
V/µs
A/ms
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