BTA206X-800ET,127 NXP Semiconductors, BTA206X-800ET,127 Datasheet - Page 6

• Manufacturer Part Number: BTA206X-800ET,127
• Description: Triacs 3 QUADRANT TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA206X-800ET,127

• Rohs: yes
• On-state Rms Current (it Rms): 6 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.4 mA
• Holding Current (ih Max): 15 mA
• Gate Trigger Voltage (vgt): 0.8 V
• Gate Trigger Current (igt): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-220F-3

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
BTA206X-800ET
Product data sheet
Symbol
R
R
Symbol
V
C
Fig 6.
isol(RMS)
th(j-h)
th(j-a)
isol
Z
(K/W)
th(j-h)
10
10
10
10
−1
−2
−3
1
10
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Transient thermal impedance from junction to heatsink as a function of pulse duration
−5
Thermal characteristics
Isolation characteristics
Parameter
thermal resistance from junction
to heatsink
thermal resistance from junction
to ambient
Parameter
RMS isolation voltage
isolation capacitance
10
−4
Conditions
from all terminals to external heatsink;
sinusoidal waveform; clean and dust free ;
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; T
from main terminal 2 to external heatsink ;
f = 1 MHz; T
All information provided in this document is subject to legal disclaimers.
10
−3
Conditions
full cycle or half cycle; with heatsink
compound; see
full cycle or half cycle; without heatsink
compound; see
in free air
Rev. 2 — 20 December 2011
h
= 25 °C
10
−2
Figure 6
Figure 6
(1)
(2)
h
= 25 °C
10
(3)
(4)
−1
BTA206X-800ET
Min
-
-
-
Min
-
-
1
P
Typ
-
-
55
Typ
-
10
t
t
p
p
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
(s)
003aaf915
Max
4.5
6.5
-
Max
2500
-
t
10
Unit
K/W
K/W
K/W
Unit
V
pF
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