MT46H4M32LFB5-6 AT:K Micron Technology Inc, MT46H4M32LFB5-6 AT:K Datasheet - Page 12

• Manufacturer Part Number: MT46H4M32LFB5-6 AT:K
• Description: IC DDR SDRAM 128MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H4M32LFB5-6 AT:K

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 5: 90-Ball VFBGA – Top View, x32 only
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Notes:
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1. D9 is a test pin that must be tied to V
2. Unused address pins become RFU.
V
V
V
V
V
V
V
V
V
CKE
V
V
A9
A6
A4
DDQ
DDQ
DDQ
DDQ
1
SSQ
SSQ
SSQ
SSQ
DD
SS
SS
DQ31
DQ29
DQ27
DQ25
DQ11
DQ13
DQ15
DQS3
DQS1
DM3
DM1
DQ9
A11
CK
A7
2
DQ30
DQ28
DQ26
DQ24
DQ10
DQ12
DQ14
V
DQ8
V
CK#
A12
NC
A8
A5
3
SSQ
SSQ
12
4
128Mb: x16, x32 Mobile LPDDR SDRAM
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
or V
6
SSQ
in normal operations.
A10/AP
DQ17
DQ19
DQ21
DQ23
V
V
WE#
DQ7
DQ5
DQ3
DQ1
A13
CS#
A2
DDQ
DDQ
7
DQ16
DQ18
DQ20
DQ22
DQS2
DQS0
CAS#
DM2
DM0
DQ6
DQ4
DQ2
DQ0
BA0
A0
8
© 2007 Micron Technology, Inc. All rights reserved.
Ball Assignments
TEST
V
V
RAS#
V
V
V
V
V
V
BA1
V
V
A1
A3
DDQ
DDQ
DDQ
DDQ
9
SSQ
SSQ
SSQ
DD
DD
SS
1