MT46H4M32LFB5-6 AT:K Micron Technology Inc, MT46H4M32LFB5-6 AT:K Datasheet - Page 62

• Manufacturer Part Number: MT46H4M32LFB5-6 AT:K
• Description: IC DDR SDRAM 128MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H4M32LFB5-6 AT:K

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 25: Random Read Accesses
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
62
t
DQSCK, and
D
T2n
T2n
OUT
128Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
t
DQSQ.
D
Don’t Care
T3n
T3n
D
OUT
OUT
D
D
T4
OUT
T4
NOP
NOP
OUT
D
T4n
T4n
D
OUT
OUT
© 2007 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
OUT
D
OUT
T5n
T5n
D
D
OUT
OUT