MT46H4M32LFB5-6 AT:K Micron Technology Inc, MT46H4M32LFB5-6 AT:K Datasheet - Page 76
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MT46H4M32LFB5-6 AT:K
Manufacturer Part Number
MT46H4M32LFB5-6 AT:K
Description
IC DDR SDRAM 128MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H4M32LFB5-6 AT:K
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (4Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 105°C
Package / Case
90-VFBGA
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 39: WRITE-to-READ – Interrupting
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
CK
4
5
4
5
4
5
WRITE
Bank a,
Col b
T0
Notes:
t
t
t
1,2
DQSS
DQSS
DQSS
1. An interrupted burst of 4 is shown; 2 data elements are written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3.
4. DQS is required at T2 and T2n (nominal case) to register DM.
5. D
D
IN
t
NOP
WTR is referenced from the first positive CK edge after the last data-in pair.
D
T1
IN
IN
b = data-in for column b; D
D
D
IN
IN
T1n
D
IN
D
IN
NOP
T2
t
WTR
T2n
3
76
Bank a,
READ
Col n
T3
OUT
128Mb: x16, x32 Mobile LPDDR SDRAM
n = data-out for column n.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
T4
Don’t Care
CL = 3
CL = 3
CL = 3
T5
NOP
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
OUT
OUT
T6
NOP
D
D
D
OUT
OUT
OUT
T6n