BT136X-600E/DG,127 NXP Semiconductors, BT136X-600E/DG,127 Datasheet - Page 2

• Manufacturer Part Number: BT136X-600E/DG,127
• Description: Triacs 4Q TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136X-600E/DG,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Factory Pack Quantity: 50

NXP Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
full pack plastic envelope, intended for
use in general purpose bidirectional
switching
applications, where high sensitivity is
required in all four quadrants.
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
case isolated
PIN
DRM
t
GM
GM
G(AV)
stg
j
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
and
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
phase
control
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/μs
= 6 A; I
G
= 0.2 A;
case
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
1 2 3
hs
j
= 25 ˚C prior to
≤ 92 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT136X-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-600
600
MAX.
600E
600
BT136X series E
25
1
4
Product specification
MAX.
150
125
3.1
0.5
25
27
50
50
50
10
4
2
5
5
-800
800
MAX.
800E
800
25
4
Rev 1.400
UNIT
G
A/μs
A/μs
A/μs
A/μs
UNIT
T1
A
W
W
˚C
˚C
V
A
A
A
A
V
2
V
A
A
s