BT136X-600E/DG,127 NXP Semiconductors, BT136X-600E/DG,127 Datasheet - Page 5

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BT136X-600E/DG,127

Manufacturer Part Number
BT136X-600E/DG,127
Description
Triacs 4Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT136X-600E/DG,127

Rohs
yes
Mounting Style
Through Hole
Package / Case
TO-220F-3
Factory Pack Quantity
50
June 2001
Triacs
sensitive gate
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
Semiconductors
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
12
10
100
0.01
8
6
4
2
0
10
0.1
10
1
0
10us
IT / A
1
0
Rs = 0.091 ohms
dVD/dt (V/us)
Tj = 125 C
dV
Vo = 1.27 V
Zth j-hs (K/W)
Tj = 25 C
with heatsink compound
without heatsink compound
D
/dt versus junction temperature T
0.5
0.1ms
unidirectional
pulse width t
1ms
1
50
VT / V
tp / s
10ms
Tj / C
1.5
bidirectional
typ
BT136X series E
P
D
Product specification
p
0.1s
.
100
2
t p
max
1s
2.5
th j-hs
t
, versus
Rev 1.400
j
.
10s
150
3

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