2SC5200-R(Q) Toshiba, 2SC5200-R(Q) Datasheet

2SC5200-R(Q)

Manufacturer Part Number

2SC5200-R(Q)

Description

Transistors Bipolar - BJT Transistor NPN 230V 15A

Manufacturer

Toshiba

Datasheet

1.2SC5200-RQ.pdf (4 pages)

Specifications of 2SC5200-R(Q)

Product Category

Transistors Bipolar - BJT

Rohs

yes

Configuration

Single

Transistor Polarity

NPN

Collector- Base Voltage Vcbo

230 V

Collector- Emitter Voltage Vceo Max

230 V

Emitter- Base Voltage Vebo

5 V

Collector-emitter Saturation Voltage

230 V

Maximum Dc Collector Current

15 A

Gain Bandwidth Product Ft

30 MHz

Dc Collector/base Gain Hfe Min

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-3P

Continuous Collector Current

15 A

Dc Current Gain Hfe Max

160

Maximum Power Dissipation

150 W

Factory Pack Quantity

100

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Power Amplifier Applications

•

Absolute Maximum Ratings

High breakdown voltage: V

Complementary to 2SA1943

Suitable for use in 100-W high fidelity audio amplifier’s output stage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

= 25°C)

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

TOSHIBA Transistor Silicon NPN Triple Diffused Type

CEO

= 230 V (min)

Symbol

CBO

CEO

EBO

stg

= 25°C)

2SC5200

−55 to 150

Rating

230

150

1.5

Unit

°C

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

2-21F1A

2011-02-02

2SC5200

―

Unit: mm

Related parts for 2SC5200-R(Q)

2SC5200-R(Q) Summary of contents

Page 1

... V (min 25°C) a Symbol Rating Unit V 230 V CBO V 230 V CEO EBO 1 150 150 ° −55 to 150 °C stg 1 2SC5200 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) 2011-02-02 ...

Page 2

... MHz Part No. (or abbreviation code) Lot No. NOTE 2 2 2SC5200 Min Typ. Max Unit ― ― 5.0 μA ― ― 5.0 μA 230 ― ― ― 160 35 60 ― ...

... Common emitter 0.4 Base-emitter voltage V 300 Tc = 100°C 100 25 30 − Common emitter 100 0.01 V CEO max 1000 3 2SC5200 I – 100°C 25 −25 0.8 1.2 1.6 2.0 ( – 0 100 Collector current I (A) C 2011-02-02 ...

Page 4

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SC5200 2011-02-02 ...

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2SC5200-R(Q) Toshiba, 2SC5200-R(Q) Datasheet

2SC5200-R(Q)

Specifications of 2SC5200-R(Q)

Related parts for 2SC5200-R(Q)

2SC5200-R(Q) Summary of contents

Page 1

Page 2

Page 3

Page 4

Related keywords