2SC5200-R(Q) Toshiba, 2SC5200-R(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SC5200-R(Q)
• Description: Transistors Bipolar - BJT Transistor NPN 230V 15A
• Manufacturer: Toshiba

Specifications of 2SC5200-R(Q)

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 230 V
• Collector- Emitter Voltage Vceo Max: 230 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 230 V
• Maximum Dc Collector Current: 15 A
• Gain Bandwidth Product Ft: 30 MHz
• Dc Collector/base Gain Hfe Min: 35
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-3P
• Continuous Collector Current: 15 A
• Dc Current Gain Hfe Max: 160
• Maximum Power Dissipation: 150 W
• Factory Pack Quantity: 100

0.03
0.01
0.05
0.03
0.3
0.1
0.5
0.3
0.1
20
16
12
50
30
10
0.01
8
4
0
3
1
5
3
1
0
3
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I C max (pulsed)*
I C max (continuous)
−25
DC operation
Tc = 25°C
Tc = 25°C
800
Collector-emitter voltage V
Collector-emitter voltage V
2
600
10
0.1
25
100 ms*
Collector current I
400
Safe Operating Area
300
V
4
CE (sat)
I
30
250
C
200
Tc = 100°C
– V
150
1
CE
I B = 10 mA
100
– I
1 ms*
6
100
C
C
Common emitter
I C /I B = 10
Common emitter
Tc = 25°C
CE
CE
(A)
10 ms*
10
50
300
8
(V)
(V)
V CEO max
40
30
20
100
10
1000
3
300
100
20
16
12
30
10
0.01
8
4
0
3
1
0
Common emitter
V CE = 5 V
Common emitter
V CE = 5 V
−25
Tc = 100°C
25
0.4
Base-emitter voltage V
0.1
Tc = 100°C
Collector current I
0.8
I
h
C
FE
−25
– V
1
– I
25
BE
C
1.2
C
BE
(A)
10
(V)
1.6
2011-02-02
2SC5200
100
2.0