BC857AT T/R NXP Semiconductors, BC857AT T/R Datasheet - Page 3

• Manufacturer Part Number: BC857AT T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857AT T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-416
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC857AT,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2000 Nov 15
R
I
I
h
V
V
C
C
f
F
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
PNP general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current V
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC856AT; BC857AT
BC856BT; BC857BT
BC857CT
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
I
I
I
I
V
V
I
f = 100 MHz
I
R
C
C
C
C
C
C
CB
CB
EB
CE
CB
EB
S
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= −10 mA; V
= −200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
= −5 V; I
= −0.5 V; f = 1 MHz; I
= −30 V; I
= −30 V; I
= −5 V; I
= −10 V; f = 1 MHz; I
CONDITIONS
C
C
CE
E
E
B
= 0
= −2 mA
CE
CE
B
3
CE
= 0
= 0; T
= −0.5 mA
= −5 V
= −5 mA; note 1
= −5 V
= −5 V;
= −5 V;
in free air; note 1
j
= 150 °C
E
CONDITIONS
C
= i
= i
e
c
= 0
= 0
BC856T; BC857T series
−
−
−
125
220
420
−
−
−580
−
−
−
100
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
10
−
−
TYP.
VALUE
833
Product data sheet
−15
−5
−100
250
475
800
−200
−400
−700
−770
2.5
−
−
10
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT