BC857AT T/R NXP Semiconductors, BC857AT T/R Datasheet - Page 7

• Manufacturer Part Number: BC857AT T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857AT T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-416
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC857AT,115

NXP Semiconductors
PACKAGE OUTLINE
2000 Nov 15
Plastic surface mounted package; 3 leads
PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
scale
EIAJ
0.5
v
7
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
BC856T; BC857T series
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product data sheet
X
ISSUE DATE
97-02-28
SOT416