PBSS4240Y T/R NXP Semiconductors, PBSS4240Y T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS4240Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4240Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 230 MHz
• Dc Collector/base Gain Hfe Min: 350 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4240Y,115

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
• Replacement for SOT89/SOT223 standard packaged
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
DESCRIPTION
NPN low V
package.
PNP complement: PBSS5240Y.
MARKING
Note
1. * = p: made in Hongkong.
2001 Jul 13
PBSS4240Y
generation
transistors due to enhanced performance.
drivers).
40 V low V
* = t: made in Malaysia.
TYPE NUMBER
CEsat
transistor in a SOT363 (SC-88) plastic
CEsat
NPN transistor
42*
MARKING CODE
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
R
SYMBOL
CM
CEO
CEsat
PIN
Fig.1
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
Simplified outline (SOT363; SC-88) and
symbol.
collector-emitter voltage
peak collector current
equivalent on-resistance
6
1
Top view
PARAMETER
5
2
DESCRIPTION
4
3
3
PBSS4240Y
Product data sheet
1, 2, 5, 6
MAM441
4
40
3
<200
MAX.
V
A
mΩ
UNIT