PBSS4240Y T/R NXP Semiconductors, PBSS4240Y T/R Datasheet - Page 4

• Manufacturer Part Number: PBSS4240Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4240Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 230 MHz
• Dc Collector/base Gain Hfe Min: 350 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4240Y,115

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Jul 13
I
I
h
V
R
V
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
40 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
NPN transistor
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
I
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 100 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
B
B
B
C
C
C
C
C
= 50 mA
= 200 mA
= 200 mA
C
4
CONDITIONS
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 2 A
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA; note 1
e
= 10 V; f = 100 MHz
= 0; f = 1 MHz
j
= 150 °C
−
−
−
350
300
300
150
−
−
−
−
−
−
−
−
−
100
MIN.
−
−
−
470
450
420
250
45
70
120
130
240
140
−
−
15
230
TYP.
PBSS4240Y
Product data sheet
100
50
100
−
−
−
−
70
100
180
180
320
<200
1.1
0.75
20
−
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mΩ
V
V
pF
MHz
UNIT