BCV49 /T3 NXP Semiconductors, BCV49 /T3 Datasheet - Page 5

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BCV49 /T3

Manufacturer Part Number
BCV49 /T3
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV49 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Maximum Dc Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
2000 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCV49,135
NXP Semiconductors
2004 Dec 06
handbook, full pagewidth
NPN Darlington transistors
V
80000
60000
40000
20000
CE
h FE
= 2 V.
10
0
−1
1
Fig.2 DC current gain; typical values.
5
10
10
2
BCV29; BCV49
I C (mA)
Product data sheet
MGD837
10
3

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