MX0912B351Y TRAY NXP Semiconductors, MX0912B351Y TRAY Datasheet - Page 6

• Manufacturer Part Number: MX0912B351Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 21 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 960000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B351Y,114

Philips Semiconductors
List of components
1997 Feb 19
handbook, full pagewidth
COMPONENT
L1
L2
C1
C2
C3
C4
C5, C6
NPN microwave power transistor
0.65 mm diameter copper wire
4 turns 0.65 mm diameter
copper wire
DC block
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
DESCRIPTION
1 s
1 s
300 s
3 ms
Fig.5 Pulse definition.
100 pF
10 F; 50 V
470 F; 63 V
0.8 to 8 pF
VALUE
6
total length = 12 mm;
height of loop = 9 mm
int. diameter. 3 mm;
L = 5 mm
DIMENSIONS
MGK066
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 729.1
MX0912B351Y
CATALOGUE NO.
Product specification