MX0912B351Y TRAY NXP Semiconductors, MX0912B351Y TRAY Datasheet - Page 9

• Manufacturer Part Number: MX0912B351Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 21 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 960000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B351Y,114

Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
3.3
2.9
3.3
0.15 max
seating plane
8.25
Fig.9 SOT439A.
12.85 max
23 max
16.5
max
3.7
3
9
2
1
1.6 max
9.85
max
MBC881
max
6
10.3
10.0
min
min
2.7
2.7
MX0912B351Y
Product specification