PUMZ2 T/R NXP Semiconductors, PUMZ2 T/R Datasheet - Page 5

• Manufacturer Part Number: PUMZ2 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PUMZ2 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 7 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PUMZ2,115

NXP Semiconductors
8. Package outline
Fig 1.
PIMZ2_PUMZ2_6
Product data sheet
Plastic surface-mounted package (TSOP6); 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT457 (SC-74)
OUTLINE
VERSION
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
Rev. 06 — 17 November 2009
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
JEITA
scale
1
0.6
0.2
L p
A
NPN/PNP general-purpose double transistors
0.33
0.23
Q
A 1
2 mm
0.2
v
0.2
w
H E
E
detail X
PROJECTION
PIMZ2; PUMZ2
0.1
EUROPEAN
y
L p
Q
c
A
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
05-11-07
06-03-16
X
v
M
SOT457
A
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