BCV62B /T3 NXP Semiconductors, BCV62B /T3 Datasheet - Page 3

• Manufacturer Part Number: BCV62B /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV62B /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCV62B,235

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
BCV62
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Table 8.
T
Symbol
Per transistor
V
V
V
I
I
I
Per device
P
T
T
T
Symbol
R
Symbol
Transistor TR1
I
I
h
V
C
CM
BM
CBO
EBO
j
FE
j
amb
stg
CBO
CEO
EBS
tot
CEsat
th(j-a)
= 25
Device mounted on an FR4 Printed-Circuit Board (PCB).
Device mounted on an FR4 PCB.
°
C unless otherwise specified.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from junction
to ambient
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
Conditions
V
V
T
V
V
I
V
I
I
I
I
C
C
B
C
B
j
CB
CB
EB
CE
CE
= 150 °C
= −0.5 mA
= −5 mA
= −100 μA
= −10 mA;
= −100 mA;
= −5 V; I
= −30 V; I
= −30 V; I
= −5 V;
= −5 V; I
open emitter
open base
T
Conditions
V
Conditions
in free air
amb
CE
= 0 V
PNP general-purpose double transistors
≤ 25 °C
C
C
E
E
= 0 A
= −2 mA
= 0 A
= 0 A;
[1]
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Min
-
Min
-
-
-
100
100
-
-
Typ
-
Typ
-
-
-
-
-
−75
−250
© NXP B.V. 2010. All rights reserved.
Max
−30
−30
−6
−100
−200
−200
250
150
+150
+150
BCV62
Max
500
Max
−15
−5
−100
-
800
−300
−650
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Unit
K/W
Unit
nA
μA
nA
mV
mV
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