BCV62B /T3 NXP Semiconductors, BCV62B /T3 Datasheet - Page 8

• Manufacturer Part Number: BCV62B /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV62B /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCV62B,235

NXP Semiconductors
8. Test information
BCV62
Product data sheet
Fig 13. Maximum collector-emitter voltage as a function of emitter resistor
Fig 14. Test circuit current matching
Fig 15. Current mirror with emitter resistors
−V
CE1max
(V)
−30
−20
−10
I
(see
C1
10
0
/I
−1
E2
Figure
= 1.3
All information provided in this document is subject to legal disclaimers.
15)
Rev. 4 — 26 July 2010
−V CE1
−V CE1
1
I C1
I C1
A
A
TR1
TR1
2
3
2
3
R E
PNP general-purpose double transistors
TR2
TR2
1
4
1
4
R E
006aaa841
006aac001
10
constant
constant
I E2 =
50 mA
I E2 =
R
E
10 mA
(Ω)
5 mA
© NXP B.V. 2010. All rights reserved.
mbk083
1 mA
I
E2
BCV62
=
10
2
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